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- Advances in Research and Development
Advances in Research and Development
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Discusses the research about structure, physics, and infrared photoemissive behavior of heavily doped silicon homojunctions and Ge and GaAs-based alloy junctions. This work reviews the status of SiGe/Si quantum wells for infrared detection. It discusses key developments in the growing research on quantum-well infrared photodetectors (QWIPs).
Folgt in ca. 15 Arbeitstagen