Compound Semiconductors Strained Layers and Devices

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During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu­ mulation of new materials and devices with enhanced performance made pos­ sible by strain. 1989-1999 have been very good years for the strained-Iayer­ devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break­ throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi­ ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per­ formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de­ scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.