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- SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
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Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe and Si-C alloys.
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