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- Strain-Induced Effects in Advanced MOSFETs
Strain-Induced Effects in Advanced MOSFETs
Angebote / Angebote:
Strain is used to boost performance of MOSFETs. Modeling of strain effects
on transport is an important task of modern simulation tools required for
device design. The book covers all relevant modeling approaches used to
describe strain in silicon. The subband structure in stressed semiconductor
films is investigated in devices using analytical k.p and numerical pseudopotential
methods. A rigorous overview of transport modeling in strained
devices is given
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